Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures

Abstract

In this work, gate-all-around nanowire MOSFETs are studied at very low temperature (4.2 K) and drain voltage. It is shown that these conditions make quantum transport prevail over the usual drift diffusion mechanism. The 1/f noise level is investigated in order to study the impact of quantum transport on the noise mechanism. Generation-recombination noise shows the presence of traps in the gate oxide and in the silicon film. This work is completed by the low frequency noise spectroscopy analysis.