Interband RTDs with nanoelectronic HBT-LED structures for multiple-valued computation

L. Micheel, H. Hartnagel
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引用次数: 4

Abstract

For future nanoelectronic arrays, complex signal processing methods and highly efficient computation are required. A proposed new family of HBT-LED-RTD circuitry chiefly addresses the latter with multiple-valued logic. We use internal optical methods of signal summation in otherwise electronic circuitry. Precision photon streams are generated and summed that are equivalent to electron currents in conventional circuitry. These strictly local interactions of HBTs and LEDs are combined with the folding and thresholding functions of vertically integrated RTDs. Power-of-two bit patterns implement the positive-digit radix-2 MVL. The same circuitry with a summation range of seven also facilitates nanoelectronic signal processing with its innate A/D conversion capability. Our new circuitry is aimed at very high packing density on the order of 10/sup 4/ to 10/sup 6/ gates per IC die. For this purpose it is resistor free and requires no signal-level shifting subcircuits, the HBT-RTD structure is 3-dimensional, and parasitic electrostatic interaction of densely packed circuits is prevented by the optical isolation and the buried optical interconnects. Non-local (especially vertical free-space) optical interconnects are also feasible with our approach using LEDs or microcavity lasers.
用于多值计算的纳米电子HBT-LED结构带间rtd
对于未来的纳米电子阵列,需要复杂的信号处理方法和高效的计算。提出了一种新的HBT-LED-RTD电路系列,主要解决了后者的多值逻辑。我们在其他电子电路中使用内部光学方法进行信号求和。精确光子流的产生和求和相当于传统电路中的电子电流。这些hbt和led的严格局部相互作用与垂直集成rtd的折叠和阈值功能相结合。2位的幂位模式实现了正数基数-2的MVL。与求和范围为7的相同电路也有利于纳米电子信号处理,其固有的a /D转换能力。我们的新电路旨在实现非常高的封装密度,每个IC芯片的封装密度为10/sup 4/至10/sup 6/门。为此,它不需要电阻,不需要信号电平移位子电路,HBT-RTD结构是三维的,并且通过光隔离和埋地光互连防止了密集封装电路的寄生静电相互作用。非局部(特别是垂直自由空间)光互连也是可行的,我们的方法使用led或微腔激光器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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