Low Dk / Df Dielectric Material for 5G Applications

Abstract

In this paper, we have developed a new low Dk / Df dielectric material for 5G applications. This material is based on modified polyphenylene ether (m-PPE) and elastomer. It can be cured at 200 degrees Celsius. This material has low Dk / Df, high Tg, low water absorption and low warpage properties, therefore it is suitable dielectric layers for 5G Wafer Level Chip Size Packages (WL-CSP) and High-Performance Computing (HPC) substrates.