Effect of purity of the starting materials on the parameters of epitaxial GaAs, produced by MOCVD-method

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415) Pub Date : 2000-09-11 DOI:10.1109/CRMICO.2000.1256174

G. G. Devyatykh, A. Moiseev, A. V. Chilyasov, A. Kotkov, V. A. Ivanov, L.S. Vasiliev

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Abstract

High-purity arsine and trimethylgallium are used to produce A/sup 3/B/sup 5/ epitaxial layers by MOCVD-method for application in microwave devices and in optoelectronics. The present work is aimed to investigate the effect of purity of the starting materials on the electrophysical parameters of epitaxial gallium arsenide, produced by MOCVD-method, as well as to develop the technology for the production of high-purity arsine and TMG.

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原料纯度对mocvd法制备外延砷化镓参数的影响

采用mocvd法制备了A/sup 3/B/sup 5/外延层，用于微波器件和光电器件。本研究旨在探讨原料纯度对mocvd法制备外延砷化镓电物理参数的影响，并开发生产高纯砷化镓和TMG的技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415)

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