Sensitivities of Bilayer Graphene FET Performance to Bipolar Characteristics

Abstract

A model of top gate bilayer graphene field effect transistor (FET) was designed in this paper, and the properties of the transistor were analyzed via MATLAB numerical simulation. The results show that characteristics of bipolar carriers in graphene were reflected in the transistor performances. The channel carrier type, concentration, and drain current change with the top gate Dirac point voltage (VTG-D). The device trans conductance and characteristic frequency increase with decreasing the absolute value of VTG-D. The characteristic frequency can reach up to 210 GHz when the voltage between drain and source electrodes and the absolute value of VTG-D equal to 0.7 V and 0.5 V, respectively, which indicates that the bilayer graphene FET would be suitable for high frequency applications, and also reveals the designed device as potential sensor in the future.