{"title":"Comparison of high-voltage linear transmitter topologies for ultrasound CMUT applications","authors":"S. Khandelwal, T. Ytterdal","doi":"10.1109/PRIME.2013.6603098","DOIUrl":null,"url":null,"abstract":"In this paper, we present a comparison of high-voltage linear transmitter circuits for driving capacitive micro-machined ultrasound transducers (CMUTs). CMUTs are emerging transducer elements in ultrasound imaging applications. Two different circuit topologies for the high-voltage linear transmitter with a 40 V peak-to-peak output voltage are compared. We compare the two designs based on total harmonic distortion, power consumption, bandwidth and area for same voltage gain. The designs are done in AMS 0.18 μm technology, and utilize Si LDMOS device for a high-voltage output.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PRIME.2013.6603098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we present a comparison of high-voltage linear transmitter circuits for driving capacitive micro-machined ultrasound transducers (CMUTs). CMUTs are emerging transducer elements in ultrasound imaging applications. Two different circuit topologies for the high-voltage linear transmitter with a 40 V peak-to-peak output voltage are compared. We compare the two designs based on total harmonic distortion, power consumption, bandwidth and area for same voltage gain. The designs are done in AMS 0.18 μm technology, and utilize Si LDMOS device for a high-voltage output.