{"title":"Hydrogenated Amorphous Carbon Films Prepared by Plasma-enhanced Chemical Vapor Deposition","authors":"J. Huran, A. Kobzev, N. Balalykin, J. Pezoltd","doi":"10.1109/ASDAM.2008.4743297","DOIUrl":null,"url":null,"abstract":"A capacitively coupled plasma reactor was used for PECVD technology, where methane was introduced into the plasma reactor through the shower head. The concentration of species in the a-C:H films were determined by RBS and ERD method. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at.%. The films contain a small amount of oxygen and nitrogen. Chemical compositions were analyzed by IR spectroscopy. IR results showed the presence of C-H specific bonds.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"148 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A capacitively coupled plasma reactor was used for PECVD technology, where methane was introduced into the plasma reactor through the shower head. The concentration of species in the a-C:H films were determined by RBS and ERD method. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at.%. The films contain a small amount of oxygen and nitrogen. Chemical compositions were analyzed by IR spectroscopy. IR results showed the presence of C-H specific bonds.