On the impact of indium and boron on the Reversed Narrow-Channel Effect (RNCE) in BULK and SOI MOSFETs

Abstract

For the first time, experimental results are presented on the Reverse Narrow-Channel Effect (RNCE) in SOI and bulk MOSFETs using indium as a channel dopant. The presented results show that devices with an indium channel exhibit the same RNCE as devices with a boron channel, which refers to the same diffusion mechanisms in deep submicron devices.