Small-delay defects detection under process variation using Inter-Path Correlation

Francisco J. Galarza-Medina, J. L. Garcia-Gervacio, V. Champac, A. Orailoglu
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引用次数: 6

Abstract

Detection of Small Delay Defects (SDDs) is a major concern in modern circuits using nanometer technologies. They are difficult to test and an important source of test escapes, and even when SDDs do not produce functional failures, they represent a reliability risk. The detection of these defects aggravates in the presence of process variations. In this paper, a methodology to detect SDDs in the presence of process variations using delay correlation information between paths of a circuit is proposed. This methodology exploits the concept that for two highly correlated paths, an important part of the delay variance in one path can be described by the delay variance in the second path. The methodology has been further extended to consider multiple path correlation thus improving the detection of SDDs. This methodology is able to distinguish delay defects from process variations. A metric is also proposed to quantify the SDD screenable variance that represents the percentage of variance where a defect can be detected. A statistical timing analysis framework has been developed and implemented to compute timing information and Inter-Path Correlation (IPC). Spatial and structural correlation, and random dopant fluctuations are considered. Simulation results in 74LS85 and ISCAS85 benchmark circuits evince the feasibility of the proposed methodology.
基于路径间相关的工艺变化下的小延迟缺陷检测
在现代纳米电路中,小延迟缺陷的检测是一个重要的问题。它们很难测试,并且是测试逃逸的重要来源,即使在sdd不产生功能故障的情况下,它们也代表着可靠性风险。在存在工艺变化的情况下,这些缺陷的检测会加剧。本文提出了一种利用电路路径之间的延迟相关信息来检测存在工艺变化的sdd的方法。该方法利用了这样一个概念,即对于两条高度相关的路径,一条路径上的延迟方差的重要部分可以用另一条路径上的延迟方差来描述。该方法已进一步扩展到考虑多路径相关,从而提高了sdd的检测。这种方法能够从过程变化中区分延迟缺陷。还提出了一个度量来量化SDD可筛选方差,该方差表示可以检测到缺陷的方差百分比。开发并实现了一个统计时序分析框架,用于计算时序信息和路径间相关(IPC)。考虑了空间和结构相关性以及掺杂剂的随机波动。在74LS85和ISCAS85基准电路上的仿真结果证明了该方法的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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