Low capacitance multilevel interconnection using low-/spl epsi/ organic spin-on glass for quarter-micron high-speed ULSIs

Abstract

A low capacitance multilevel interconnection for high-speed ULSIs is developed. It employs metal-line spaces filled with only a low-dielectric-constant, reflowable organic spin-on glass (SOG). The SOG-filled dielectrics reduce interconnection-capacitance to about 70% that of conventional structures, and provide a breakdown voltage of 1.7 MV/cm. Low via resistance with via holes down to 0.37 /spl mu/m is achieved using O/sub 2/-RIE (reactive ion etching) surface treatment and a W-plug.