A Practical HfO2-based OxRAM Memristor Model Suitable for Circuit Design and Simulation

Abstract

CMOS technologies are attending their limits due to its continuous shrinking process, which has an impact on various aspects, accurately on the size, performance and power consumption of the device. One of the promising devices known as memristor is under investigation in order to be used together with deep nanometer CMOS, that has the ability to solve technologies problems. It has emerged in several domains due to its nonlinear behavior, nonvolatility, low power consumption, high density and compatibility with CMOS. Several memristor models have been developed so far. Whereas, a compact model should be flexible and sufficiently accurate. In this paper, an analysis of a memristor model using Verilog-A and SPICE is discussed, in order to elaborate an appropriate model for implementation in CMOS-based circuit applications. It is shown that the proposed Verilog-A model is flexible, accurate and efficient, verified by both electrical simulations and experimentally measured results. It also carries the desired nonlinear memristor fingerprint, an adjustable threshold voltage and the applicability to fit and simulate different switching behaviors. Hence, it is the most suitable for low-power and high-density applications at the industrial levels, which takes advantage compared to other approaches based on SPICE models.