Compact modeling of nanoscale MOSFETs in the ballistic limit

Abstract

We present a compact model based on the Landauer transmission theory for the silicon quantum wire/well metal-oxide-semiconductor field effect transistor (MOSFET) working in the ballistic limit. This model captures the static current-voltage characteristics in all the operation regimes, below and above threshold voltage. The model provides a basic framework to account for the electronic transport in MOSFETs, being easily adaptable to gate structures as the double-gate (DG) or gate-all-around (GAA). Numerical simulations based on the proposed model have been compared with quantum mechanical self-consistent simulations and experimental results, with good agreement.