Performance Enhancement of Compatible Lateral Bipolar Transistors for High-Precision CMOS Analog Design

Abstract

The residual gate effect on the lateral collector current of compatible lateral bipolar transistors is modelled and a novel method for biasing the gate is presented. It is shown that this effect can be used to compensate transistors mismatch in order to enhance the precision of analog CMOS circuits by a factor of 5-10 over a temperature range of 100°K.