Y.J. Yang, T. Dziura, S.C. Wang, R. Fernandez, S. Wang
{"title":"Large Cw Power, Very Low Threshold, Single Transverse Mode Operation of Vertical Cavity Mushroom Structure Surface Emitting Lasers","authors":"Y.J. Yang, T. Dziura, S.C. Wang, R. Fernandez, S. Wang","doi":"10.1109/DRC.1991.664668","DOIUrl":null,"url":null,"abstract":"Summary form only given. Continuous-wave GaAs mushroom structure surface emitting laser (MSEL) operation at a threshold current as low as 1.6 mA, an output power >2.0 mW, and a single transverse mode up to three times threshold current is reported. The relatively large CW output power was achieved by reducing the series resistance using a selective zinc diffusion. The low threshold current and single-mode operation are attributed to good lateral current confinement in a small constricted region formed by mesa undercutting. The complete device was mounted junction-side up on a chip carrier and tested CW at room temperature. Some results are given. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Summary form only given. Continuous-wave GaAs mushroom structure surface emitting laser (MSEL) operation at a threshold current as low as 1.6 mA, an output power >2.0 mW, and a single transverse mode up to three times threshold current is reported. The relatively large CW output power was achieved by reducing the series resistance using a selective zinc diffusion. The low threshold current and single-mode operation are attributed to good lateral current confinement in a small constricted region formed by mesa undercutting. The complete device was mounted junction-side up on a chip carrier and tested CW at room temperature. Some results are given. >