On-chip spur and phase noise cancellation techniques

Yi-An Li, M. Mar, B. Nikolić, A. Niknejad
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引用次数: 1

Abstract

Two techniques for spur and phase noise cancellation have been proposed. A fully integrated design achieves a measured spur cancellation of 15dB at 250MHz and 750MHz offset as well as phase noise cancellation from 4MHz to 200MHz offset with maximum 25dB cancellation depth for a 1-GHz clock. The proposed ideas have been verified through a fabricated 65nm CMOS prototype with power consumption of 11mW from a supply voltage of 1.2V.
片上杂散和相位噪声消除技术
提出了两种消除杂散和相位噪声的技术。完全集成的设计在250MHz和750MHz偏置时实现了15dB的测量杂散消除,在4MHz到200MHz偏置时实现了相位噪声消除,对于1 ghz时钟,最大消除深度为25dB。所提出的想法已经通过一个制造的65nm CMOS原型进行了验证,该原型在1.2V电源电压下功耗为11mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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