Solution processed OTFTs with 1 cm/sup 2//V-s mobility

C. Kuo, M. Payne, J. Anthony, T. Jackson
{"title":"Solution processed OTFTs with 1 cm/sup 2//V-s mobility","authors":"C. Kuo, M. Payne, J. Anthony, T. Jackson","doi":"10.1109/DRC.2004.1367900","DOIUrl":null,"url":null,"abstract":"This work presents fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl thienyl pentacene (TES thienyl pentacene) with 1 cm/sup 2//V-s field-effect mobility. The devices also have an on/off current ratio >10/sup 7/ and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution processed OTFTs demonstrated to date and the first with performance comparable to thermally evaporated pentacene devices.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This work presents fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl thienyl pentacene (TES thienyl pentacene) with 1 cm/sup 2//V-s field-effect mobility. The devices also have an on/off current ratio >10/sup 7/ and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution processed OTFTs demonstrated to date and the first with performance comparable to thermally evaporated pentacene devices.
溶液处理OTFTs具有1 cm/sup 2/ V-s的迁移率
本文提出了一种基于三乙基硅乙基噻吩并五烯(TES噻吩并五烯)的溶液加工有机薄膜晶体管(OTFTs),其场效应迁移率为1 cm/sup 2/ V-s。该器件还具有开/关电流比bbb10 /sup 7/和亚阈值斜率接近1 V/ 10年。据我们所知,这是迄今为止证明的迁移率最高的解决方案处理的otft,也是第一个性能可与热蒸发五苯器件相媲美的器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信