Poly Si-Si interfacial oxide ball-up mechanism and its control for 0.8 mu m BiCMOS VLSIs

Proceedings of the Bipolar Circuits and Technology Meeting Pub Date : 1989-09-18 DOI:10.1109/BIPOL.1989.69468

T. Maeda, M. Higashizono, H. Momose, J. Matsunaga

引用次数: 5

Abstract

Three samples with different thicknesses of polysilicon-silicon interfacial oxide were prepared. The influence of the interfacial oxide on the electrical characteristics of 0.8- mu m BiCMOS VLSIs was studied. From the results, the maximum interfacial oxide thickness allowed for BiCMOS LSIs was determined. To control the interfacial oxide thickness, the ball-up mechanism was studied using HRXTEM combined with energy-dispersive X-ray spectroscopy measurements. The optimum heat treatment after emitter deposition to realize 0.5- mu m BiCMOS VLSI was also determined.<>

查看原文本刊更多论文

0.8 μ m BiCMOS vlsi的聚硅界面氧化物起球机理及其控制

制备了三种不同厚度的多晶硅-硅界面氧化物样品。研究了界面氧化物对0.8 μ m BiCMOS vlsi电学特性的影响。根据结果，确定了BiCMOS lsi允许的最大界面氧化物厚度。为了控制界面氧化层厚度，采用HRXTEM结合能量色散x射线能谱测量研究了成球机理。并确定了实现0.5 μ m BiCMOS VLSI的发射极沉积后的最佳热处理工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of the Bipolar Circuits and Technology Meeting

自引率

0.00%

发文量