{"title":"Environmentally harmonized plasma etching processes of amorphous silicon and tungsten","authors":"M. Hori, K. Fujita, S. Kobayashi, M. Ito, T. Goto","doi":"10.1109/IMNC.2000.872754","DOIUrl":null,"url":null,"abstract":"A novel etching process of a-Si and W for cleaning the CVD chamber employing ECR O/sub 2/ plasma with injecting fluorocarbon radicals generated from a fluorocarbon radical source was developed for replacing green house gases such as SF/sub 6/ gas and PFC gases. We proposed a new radical control method where the generated high order fluorocarbon radicals introduced into the plasma reactor are controlled through the radical filter heated by ceramic heater. As a result, high etching rates of 104 nm/min (a-Si) and 141 nm/min (W) were obtained by controlling heater temperature in the radical filter. These results indicated that this technique has a great potential to be applicable to a novel chamber cleaning process for replacing the conventional process with green house gases.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel etching process of a-Si and W for cleaning the CVD chamber employing ECR O/sub 2/ plasma with injecting fluorocarbon radicals generated from a fluorocarbon radical source was developed for replacing green house gases such as SF/sub 6/ gas and PFC gases. We proposed a new radical control method where the generated high order fluorocarbon radicals introduced into the plasma reactor are controlled through the radical filter heated by ceramic heater. As a result, high etching rates of 104 nm/min (a-Si) and 141 nm/min (W) were obtained by controlling heater temperature in the radical filter. These results indicated that this technique has a great potential to be applicable to a novel chamber cleaning process for replacing the conventional process with green house gases.