A simulation analysis of back gate effects for FDSOI devices

Abstract

A series of FDSOI devices were simulated using TCAD Sentaurus Process and Sentaurus Device in this paper. Different top silicon thickness (tsi), BOX oxide thickness (tbox) and the back gate voltage (Vbg) were adopted. The impacts on the devices were studied and analyzed. The change of Sub-threshold swing (SS), threshold voltage (Vt) and Ion/Ioff were presented. Long channel and Short channel devices were simulated and studied respectively. Appropriate values of tsi, tbox and Vbg could induce a better performance of the FDSOI devices.