Design of a 420GHz Sub-Harmonic Mixer based on planar Schottky diode

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588335

Ge Liu, Bo Zhang, Lisen Zhang, D. Xing, Junlong Wang, Yong Fan

引用次数: 2

Abstract

In this paper, a 420GHz Sub-Harmonic Mixer based on planar schottky diode is presented. The mixer circuit was fabricated on the 50um thick quartz substrate with a pair of anti-parallel flip-chipped schottky diodes. The planar schottky diode is fabricated in China Electronics Technology Group Corporation-13(CETC-13). Simulated results for the 420 GHz mixer achieved DSB conversion loss of 6.2dB@404GHz. The LO pumped power was 6dBm at 210GHz. The conversion loss was less than 8dB from 390GHz to 450GHz.

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基于平面肖特基二极管的420GHz次谐波混频器设计

提出了一种基于平面肖特基二极管的420GHz次谐波混频器。混合电路是用一对反平行倒装肖特基二极管在50um厚的石英衬底上制作的。平面肖特基二极管是在中国电子科技集团公司(CETC-13)制造的。仿真结果表明，420 GHz混频器的DSB转换损耗为6.2dB@404GHz。LO抽运功率在210GHz时为6dBm。从390GHz到450GHz的转换损耗小于8dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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