Yifan YangGong, Sebastian Turullols, Daniel Woo, Chang-Yang Huang, King C. Yen, V. Krishnaswamy, K. Holdbrook, Jinuk Luke Shin
{"title":"Asymmetric Frequency Locked Loop (AFLL) for adaptive clock generation in a 28nm SPARC M6 processor","authors":"Yifan YangGong, Sebastian Turullols, Daniel Woo, Chang-Yang Huang, King C. Yen, V. Krishnaswamy, K. Holdbrook, Jinuk Luke Shin","doi":"10.1109/ASSCC.2014.7008938","DOIUrl":null,"url":null,"abstract":"In order to minimize the impact of on-chip Ldi/dt noise on power and performance, Oracle's SPARC M6 processor features an Asymmetric Frequency Locked Loop (AFLL) that dynamically adjusts chip frequency. It achieves 15% improved noise immunity by reacting to the voltage noise asymmetrically through the use of a pair of DCO's that accurately track the response of critical paths. The AFLL is implemented in 28nm CMOS process in 0.045mm2 of area, dissipating 14mW, and reducing jitter by 50%.","PeriodicalId":161031,"journal":{"name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2014.7008938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In order to minimize the impact of on-chip Ldi/dt noise on power and performance, Oracle's SPARC M6 processor features an Asymmetric Frequency Locked Loop (AFLL) that dynamically adjusts chip frequency. It achieves 15% improved noise immunity by reacting to the voltage noise asymmetrically through the use of a pair of DCO's that accurately track the response of critical paths. The AFLL is implemented in 28nm CMOS process in 0.045mm2 of area, dissipating 14mW, and reducing jitter by 50%.