Modeling of irregular boron diffusion profiles over varied surface topologies

Abstract

Summary form only given. Recently, several different MEMS (Micro Electro Mechanical Systems) devices, which were designed for use in inkjet printers, capacitive pressure sensors, drug delivery devices, chemical reactors, and other similar applications, have included narrow gaps and small holes. We have found a novel technique to fabricate narrow gaps or small holes based on the high boron diffusion etch stop technique. This technique utilizes a boron diffusion anomaly in a narrow space. Such an anomaly has not been reported before and the fabricated structures are very different to what would be expected. In addition, the data from the investigation of these structures serve to point out some interesting new assumptions and suggest a mechanism and method to simulate boron diffusion profiles over a variety of surfaces. This paper describes this new boron diffusion simulator that can predict boron diffusion profiles and details the success of the simulations.