Integrated Synthesis Methodology for Crossbar Arrays

Muhammed Ceylan Morgül, O. Tunali, M. Altun, L. Frontini, V. Ciriani, E. Vatajelu, L. Anghel, C. A. Moritz, M. Stan, D. Alexandrescu
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引用次数: 7

Abstract

Nano-crossbar arrays have emerged as area and power efficient structures with an aim of achieving high performance computing beyond the limits of current CMOS. Due to the stochastic nature of nano-fabrication, nano arrays show different properties both in structural and physical device levels compared to conventional technologies. Mentioned factors introduce random characteristics that need to be carefully considered by synthesis process. For instance, a competent synthesis methodology must consider basic technology preference for switching elements, defect or fault rates of the given nano switching array and the variation values as well as their effects on performance metrics including power, delay, and area. Presented synthesis methodology in this study comprehensively covers the all specified factors and provides optimization algorithms for each step of the process.
交叉杆阵列的集成综合方法
纳米交叉棒阵列作为面积和功率效率高的结构而出现,其目的是实现超越当前CMOS限制的高性能计算。由于纳米制造的随机性,纳米阵列在结构和物理器件水平上都表现出与传统技术不同的特性。上述因素引入了需要在合成过程中仔细考虑的随机特性。例如,一个合格的综合方法必须考虑开关元件的基本技术偏好,给定纳米开关阵列的缺陷或错误率和变化值,以及它们对性能指标的影响,包括功率,延迟和面积。本研究提出的综合方法全面涵盖了所有指定因素,并为过程的每个步骤提供了优化算法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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