Fully Integrated 5.8 GHz SiGe Power Amplifier

Abstract

A fully integrated broadband push-pull power amplifier (PA) has been developed and fabricated in a 0.25 mum SiGe-HBT technology. Monolithic transformers are used to transform the 50 iquest input/output of the amplifier to the optimum load and source impedances of an efficient push-pull pair. Electromagnetic modeling of the whole chip structure has been carried out in order to optimize the performance of the presented PA. It achieves an output power of 20/23 dBm in saturation and 18/21 dBm at 1 dB power compression at a supply voltage of 1.2/1.8 V and a center frequency of 5.8 GHz. The maximum PAE is 18/20 %. A gain of (9.7plusmn1) dB was observed over a wide frequency range from 4 Ghz up to 6.4 GHz.