Comparative Analysis of Short Channel Effects in Dopingless Charge Plasma Based Nanowire FET

Abstract

Doing less gate all around (GAA) charge plasma (CP) based field effect transistor (FET) has exhibited better performance in terms of short channel effects (SCE) compared to junction-less (JL) FET. GaN has displayed promising characteristics towards bringing down SCEs in charge plasma-based devices for having higher electron mobility and wide band gap properties. In this work, four different wide band gap materials such as GaAs, Al0.1Ga0.9As, InP, and GaN were utilized in the intrinsic channel of charge plasma-based doping less FET to compare the transfer characteristics and transconductance (gm). SCEs such as drain-induced barrier lowering (DIBL) and subthreshold slope (SS) were compared and the figure of merit (FOM), Q (gm/SS) was also calculated. Subsequently, high–k dielectric material’s effect on Ion, Ioff, and Ion/Ioff at gate oxide were investigated for low power applications. Our findings revealed that CP–GaAs showed a better tradeoff between DIBL and SS in comparison to CP–GaN. Also, CP–InP produced a higher threshold device that can be used in the field of memory design. In contrast with Q factor, CP–GaN produced a higher value but CP–GaAs showed a better DIBL–SS value. Hence, both CP–GaN and CP–GaAs can be considered for high-switching applications. Also, CP–GaN produced higher transconductance than other channel materials which will offer the new scheme to enhance device performance.