Fabrication and characterization of resonant cavity enhanced silicon photodetectors at 1.55 μm

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638217

M. Casalino, L. Sirleto, L. Moretti, M. Gioffré, Giuseppe Coppola, M. Iodice, Ivo Rendina

引用次数: 2

Abstract

In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 mum, are reported.

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1.55 μm谐振腔增强硅光电探测器的制备与表征

本文报道了一种完全兼容硅微电子技术、工作在1.55 μ m的新型谐振腔增强光电探测器(RCE)的实现及其特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 5th IEEE International Conference on Group IV Photonics

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