Characterisation of deep-level defects in semi-insulating GaAs and InP by high resolution photoinduced transient spectroscopy (HRPITS)

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.570926

P. Kamiński, M. Pawłowski, R. Cwirko, M. Palczewska, R. Kozłowski

引用次数: 0

Abstract

Deep levels in undoped semi-insulating (SI) GaAs and Fe-doped SI InP investigated by photoinduced transient spectroscopy (PITS). It is demonstrated that the resolution of this method can be improved by direct computer fitting of digitally recorded photocurrent decays.

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半绝缘GaAs和InP中深能级缺陷的高分辨率光致瞬态光谱表征

利用光致瞬态光谱(PITS)研究了未掺杂半绝缘(SI) GaAs和掺铁SI InP的深能级。结果表明，通过直接对数字记录的光电流衰减进行计算机拟合，可以提高该方法的分辨率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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