Ultra low voltage and, nor and XOR CMOS gates

Abstract

In this paper we present NAND, NOR and XOR gates exploiting the ultra low-voltage (ULV) CMOS logic style [1] [2]. There are two kinds of NAND and NOR gates available using the ULV logic style; straightforward gates resembling complementary CMOS and threshold holdgates. In addition to NAND and NOR gates we present a minority three gate and an XOR ULV gate. The electrical characteristics of these two approaches are discussed with a focus on delay and noise margins. Simulated data assuming a 90 nm CMOS process is included.