Memristor-based IMPLY logic design procedure

Shahar Kvatinsky, A. Kolodny, U. Weiser, E. Friedman
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引用次数: 147

Abstract

Memristors can be used as logic gates. No design methodology exists, however, for memristor-based combinatorial logic. In this paper, the design and behavior of a memristive-based logic gate - an IMPLY gate - are presented and design issues such as the tradeoff between speed (fast write times) and correct logic behavior are described, as part of an overall design methodology. A memristor model is described for determining the write time and state drift. It is shown that the widely used memristor model - a linear ion drift memristor - is impractical for characterizing an IMPLY logic gate, and a different memristor model is necessary such as a memristor with a current threshold.
基于记忆电阻的隐式逻辑设计程序
忆阻器可用作逻辑门。然而,对于基于忆阻器的组合逻辑,没有设计方法存在。在本文中,介绍了基于记忆的逻辑门的设计和行为,并描述了设计问题,如速度(快速写入时间)和正确的逻辑行为之间的权衡,作为整体设计方法的一部分。描述了一种用于确定写入时间和状态漂移的忆阻器模型。结果表明,目前广泛使用的线性离子漂移忆阻器模型在表征隐式逻辑门时是不现实的,需要一种不同的忆阻器模型,如带电流阈值的忆阻器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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