A 50MHz–lGHz wideband low noise amplifier in 130nm CMOS technology

Henrique Luiz Andrade Pimentel, S. Bampi
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引用次数: 4

Abstract

This paper presents the design of a differential wideband LNA with inherent limitations of low noise figure in a large frequency range using a commercial 130nm RF CMOS process. This circuit is to be applied to IEEE 802.22 Cognitive Radio (CR) applications. The design is based on the noise-canceling technique, with an inductorless solution, showing that this technique effectively reduces the noise figure over the desired frequency range with moderate power consumption and a small die area. The wideband LNA covers the frequency range from 50MHz to 1GHz, achieving a noise figure of 3dB to 4dB, a gain of 11dB to 12dB, and an input/output return loss lower than -12dB. The input IP3 and input P1dB at 580MHz are above 0dBm and - 10dBm, respectively. It consumes 46.5mW from a 1.5V supply and occupies an active area of 0.056mm2.
基于130nm CMOS技术的50MHz-lGHz宽带低噪声放大器
本文采用商用130nm射频CMOS工艺,设计了一种在大频率范围内具有低噪声系数固有局限性的差分宽带LNA。该电路将应用于IEEE 802.22认知无线电(CR)应用。该设计基于降噪技术,采用无电感解决方案,表明该技术有效地降低了所需频率范围内的噪声系数,功耗适中,模具面积小。宽带LNA覆盖50MHz至1GHz的频率范围,噪声系数为3dB至4dB,增益为11dB至12dB,输入/输出回波损耗低于-12dB。580MHz时的输入IP3和输入P1dB分别大于0dBm和- 10dBm。它从1.5V电源消耗46.5mW,占用0.056mm2的有效面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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