{"title":"FEATURES OF LOADING CHARACTERISTICS OF THE CIGS PHOTOELECTRIC MODULE WHEN OPERATING ON THE SURFACE OF THE LAW","authors":"F. Akbarov, R. Kabulov","doi":"10.37681/2181-1652-019-x-2021-1-6","DOIUrl":null,"url":null,"abstract":"The study o f the load current-voltage characteristics o f a solar photovoltaic module based on a polycrystalline semiconductor binary compound Cu (In, Ga) Se 2 under normal sunlight Prad = (800 ± 5) W/m2, in a temperature range o f (32 • 60) оС. It was found that with an increase in temperature, the efficiency o f the solar photovoltaic module first decreases from 10.77% to 10.65%, and then increases to 10.97%, and the coefficient o f temperature dependence o f the efficiency in these regions differs and have values KEffi ~ - 0.18 % /К, and Kejp ~ + 0.13% /К","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-1-6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The study o f the load current-voltage characteristics o f a solar photovoltaic module based on a polycrystalline semiconductor binary compound Cu (In, Ga) Se 2 under normal sunlight Prad = (800 ± 5) W/m2, in a temperature range o f (32 • 60) оС. It was found that with an increase in temperature, the efficiency o f the solar photovoltaic module first decreases from 10.77% to 10.65%, and then increases to 10.97%, and the coefficient o f temperature dependence o f the efficiency in these regions differs and have values KEffi ~ - 0.18 % /К, and Kejp ~ + 0.13% /К