Modelling pattern dependent variations in semi-additive copper electrochemical plating: AP/DFM: Advanced patterning / design for manufacturability

C. Lang, D. Boning
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引用次数: 2

Abstract

An empirical model is proposed for predicting layout-dependent thickness variations in the semi-additive copper electrochemical plating (ECP) process. These variations are believed to be caused by the uneven depletion of copper sulfate (CuSO4) during plating, causing low pattern density areas to plate faster than higher pattern density areas. Effective pattern density is extracted from the layout using a spatial filter, and then mapped to the growth rates using a non-linear function. Test structures are designed that represent a wide range of feature sizes and densities. After plating, these structures are profiled and used to fit the model, while similar structures are used to validate its accuracy. Comparisons between the validation predictions and the experimental results show an average Balanced Root Mean Squared Error (BRMSE) of 0.292 µm, and a corresponding R2 value of 0.90.
模拟模式依赖于半添加剂铜电化学镀的变化:AP/DFM:可制造性的高级模式/设计
提出了一种预测半添加铜电化学镀(ECP)过程中厚度随布局变化的经验模型。这些变化被认为是由于在电镀过程中硫酸铜(CuSO4)的不均匀损耗造成的,导致低图案密度区域比高图案密度区域镀得更快。使用空间滤波器从布局中提取有效模式密度,然后使用非线性函数将其映射为增长率。测试结构的设计代表了广泛的特征尺寸和密度。电镀后,对这些结构进行轮廓并用于拟合模型,同时使用类似的结构来验证其准确性。验证预测与实验结果的对比表明,平均平衡均方根误差(BRMSE)为0.292µm,相应的R2值为0.90。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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