High-Q, tunable-gap MEMS variable capacitor actuated with an electrically floating plate

Hyung SukLee, Y. Yoon, Dong-Hoon Choi, Jun‐Bo Yoon
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引用次数: 29

Abstract

We proposed and developed a new MEMS variable capacitor that resembles the tunable-gap capacitor at first glance, but provides much better Q-factor thanks to reducing series resistance by the elimination of mechanical spring in the RF signal pathway using a new actuation method of moving electrically floating plate. The fabricated variable capacitor showed almost 200 % increment of Q- factor from the conventional tunable-gap capacitor. In addition, a variable capacitor array connected in parallel with four capacitors for larger capacitance was fabricated and measured. We achieved a tuning ratio of 41 % and (Q -factor of 34.9 at 5 GHz for the single capacitor and the tuning ratio of 29 % and (Q -factor of 39.8 at 1 GHz for the capacitor array.
由电浮板驱动的高q、可调间隙MEMS可变电容器
我们提出并开发了一种新的MEMS可变电容器,乍一看类似于可调间隙电容器,但由于使用移动电浮板的新驱动方法消除了射频信号通路中的机械弹簧,从而降低了串联电阻,从而提供了更好的q因子。与传统的可调间隙电容相比,所制备的可变电容的Q系数提高了近200%。此外,还制作了一个可变电容阵列,并对其进行了测量。我们实现了单个电容器在5 GHz时的调谐比为41%,Q因子为34.9,电容器阵列在1 GHz时的调谐比为29%,Q因子为39.8。
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