Xingfa Huang, L. Li, Kaikai Xu, Ruzhang Li, Cheng Shu
{"title":"An 0.35μm/ CMOS 2.4Gb/s LVDS for high-speed DAC","authors":"Xingfa Huang, L. Li, Kaikai Xu, Ruzhang Li, Cheng Shu","doi":"10.1109/ASICON.2009.5351442","DOIUrl":null,"url":null,"abstract":"In the light of application to high-speed DAC, the design and achievement of a novel high-performance CMOS LVDS receiving circuits are described in this paper. By introduction of intrinsic offset, a fixed hysteresis voltage is obtained. The whole circuit doesn't need any local feedback, and the high-speed performance of the original circuit doesn't change with introduction of hysteresis voltage. Therefore the circuit has twofold advantages: a stable hysteresis voltage and a high-speed operation. The circuit was developed in Chartered 0.35μm CMOS process technology. The tested results showed that the circuit worked stably at an operational voltage of 3.3V at a transmission speed of 2.4Gb/s. The chip size of the circuit was 0.021mm2, and the power consumption of the circuit was 8mW1.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 8th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2009.5351442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In the light of application to high-speed DAC, the design and achievement of a novel high-performance CMOS LVDS receiving circuits are described in this paper. By introduction of intrinsic offset, a fixed hysteresis voltage is obtained. The whole circuit doesn't need any local feedback, and the high-speed performance of the original circuit doesn't change with introduction of hysteresis voltage. Therefore the circuit has twofold advantages: a stable hysteresis voltage and a high-speed operation. The circuit was developed in Chartered 0.35μm CMOS process technology. The tested results showed that the circuit worked stably at an operational voltage of 3.3V at a transmission speed of 2.4Gb/s. The chip size of the circuit was 0.021mm2, and the power consumption of the circuit was 8mW1.