Ultra low-power standard cell design using planar bulk CMOS in subthreshold operation

M. Pons, Jean-Luc Nagel, D. Séverac, M. Morgan, D. Sigg, P.-F. Rüedi, C. Piguet
{"title":"Ultra low-power standard cell design using planar bulk CMOS in subthreshold operation","authors":"M. Pons, Jean-Luc Nagel, D. Séverac, M. Morgan, D. Sigg, P.-F. Rüedi, C. Piguet","doi":"10.1109/PATMOS.2013.6662149","DOIUrl":null,"url":null,"abstract":"Planar bulk CMOS in subthreshold operation allows an important reduction of the power consumption. This can lead the way to new ultra low-power applications with autonomous devices supplied by energy harvesting techniques. However, subthreshold circuits are more sensitive to threshold voltage variations and require new layout optimizations. We propose a methodology to design robust standard cell circuits to cope with the challenges of reducing the supply voltage. We provide evaluations in the 180 nm technology node for area, power, timing and sensitivity to variations for a frequency division chain circuit - commonly used in watches - and for an ultra low-power 32-bit processor. The circuits developed with our subthreshold standard cell library are supplied at 0.4 V and can also work at 1.0 V, allowing multiple modes of operation for power management. We compare them to the same designs using a mature low-power library supplied at 1.0 V.","PeriodicalId":287176,"journal":{"name":"2013 23rd International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 23rd International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PATMOS.2013.6662149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

Planar bulk CMOS in subthreshold operation allows an important reduction of the power consumption. This can lead the way to new ultra low-power applications with autonomous devices supplied by energy harvesting techniques. However, subthreshold circuits are more sensitive to threshold voltage variations and require new layout optimizations. We propose a methodology to design robust standard cell circuits to cope with the challenges of reducing the supply voltage. We provide evaluations in the 180 nm technology node for area, power, timing and sensitivity to variations for a frequency division chain circuit - commonly used in watches - and for an ultra low-power 32-bit processor. The circuits developed with our subthreshold standard cell library are supplied at 0.4 V and can also work at 1.0 V, allowing multiple modes of operation for power management. We compare them to the same designs using a mature low-power library supplied at 1.0 V.
超低功耗标准电池设计采用平面体CMOS在亚阈值操作
平面体CMOS在亚阈值操作允许一个重要的降低功耗。这可以为能量收集技术提供的自主设备带来新的超低功耗应用。然而,亚阈值电路对阈值电压变化更敏感,需要新的布局优化。我们提出了一种方法来设计稳健的标准电池电路,以应对降低电源电压的挑战。我们在180nm技术节点上对常用于手表的分频链电路和超低功耗32位处理器的面积、功率、时序和变化灵敏度进行了评估。使用我们的亚阈值标准电池库开发的电路在0.4 V电压下供电,也可以在1.0 V电压下工作,允许多种工作模式进行电源管理。我们将它们与使用1.0 V供电的成熟低功耗库的相同设计进行比较。
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