Gan-on-Silicon Based Technology for RF Cellular and Wimax Infrastructure Applications

2006 64th Device Research Conference Pub Date : 2006-06-26 DOI:10.1109/DRC.2006.305160

K. Linthicum, A. Chaudhari, J. Cook, A. Edwards, A. Hanson, J. Johnson, I. Kizilyalli, T. Li, J. Marquart, W. Nagy, C. Park, E. Piner, P. Rajagopal, S. Singhal, R. Therrien, J. Willamson

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Abstract

A GaN-on-silicon platform technology hasbeendeveloped toprovide theRF-device performance advantages ofgallium nitride combined withthemanufacturing advantages ofsilicon. A GaNFETprocess baseline hasbeenestablished tomeetthetransistor and amplifier performance demands ofUMTS andWiMaxapplications requiring higher CW powerandefficiency, higher operating voltage, broader bandwidth, higher frequency, and better linearity underW-CDMA andOFDM modulation neededbythewireless infrastructure markets. Nitronex hasusedacommonprocess baseline toscale gate peripheries, optimize internal matching networks andutilize various packaging solutions todevelop several products andinthis study wereport ontheNPT21120, NPT35010 and NPT35050whichspanperformance from2.1 - 3.5GHzandsaturated powerlevels from IOWto120W. AlGaN/GaN heterostructure field effect transistors havebeengrownandfabricated on float-zone 100mmsilicon (111) substrates bymetalorganic chemical vapor deposition [1]. Complete details ofthedevice processing havebeenpresented elsewhere [2].The baseline process includes useofsource field plates, 0.5-micron gatelengths andsource grounded backside vias.

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基于硅上氮化镓的射频蜂窝和Wimax基础设施应用技术

一种GaN-on-silicon平台技术已经被开发出来，以提供氮化镓与硅的制造优势相结合的therf器件性能优势。为了满足umts和wimax应用对晶体管和放大器性能的要求，已经建立了ganfet工艺基线，这些应用需要更高的连续波功率和效率，更高的工作电压，更宽的带宽，更高的频率，以及无线基础设施市场所需的w - cdma和dofdm调制下更好的线性度。Nitronex使用了一个通用的工艺基线来扩展栅极外设，优化内部匹配网络，并利用各种封装解决方案来开发几种产品，在本研究中，npt21120, NPT35010和npt35050的性能范围从2.1 - 3.5 ghz，饱和功率水平从ioww到120w。采用金属有机化学气相沉积的方法在浮区100毫米硅(111)衬底上生长和制备了AlGaN/GaN异质结构场效应晶体管[1]。设备处理的完整细节已在其他地方提出[2]。基线过程包括使用源场板，0.5微米栅极长度和源接地背面过孔。

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2006 64th Device Research Conference

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