Field electron emission of nano-structure carbon based thin films

Binglin Zhang, N. Yao, Zhanling Lu, Zhiqin Fan, Yongmei Zhao, Xinyue Zhang, Lan Zhang, Hueizhong Ma
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Abstract

Nano-crystalline fullerene-like film, nano-crystalline graphitic film and nano structure amorphous carbon film were prepared by microwave plasma chemical vapor deposition (MPCVD). The nano-structure and surface morphology of the deposited films were identified by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman scattering and scanning electron microscope (SEM). The field electron emission characteristics of the films were studied by a testing method of diode structure in a vacuum chamber. The deposited nano-structure carbon based thin films and phosphor coated indium tin oxide (ITO) film were used to be cathode and anode, respectively. At the initial measurement, a very low turn-on field of 0.6V//spl mu/m was obtained for the three kinds of nano-structure carbon based materials. After cycling of voltage up and down several times, the turn-on field went up to more than 1.0 V//spl mu/m, and the current density decreased. In this paper, we suggest a theoretical model to discuss the field electron emission mechanism for the nano-structure carbon based thin films, and explain the emission characteristics. The surface local states, the bond dangling of carbon atoms and adsorbates on the surface of the films were considered in the theoretical model.
纳米结构碳基薄膜的场电子发射
采用微波等离子体化学气相沉积(MPCVD)法制备了纳米晶类富勒烯膜、纳米晶石墨膜和纳米结构非晶碳膜。采用x射线衍射(XRD)、x射线光电子能谱(XPS)、拉曼散射(Raman scattering)和扫描电子显微镜(SEM)对沉积膜的纳米结构和表面形貌进行了表征。采用真空室二极管结构测试方法研究了薄膜的场电子发射特性。沉积的纳米结构碳基薄膜和涂有荧光粉的氧化铟锡(ITO)薄膜分别作为阴极和阳极。在初始测量中,三种纳米结构碳基材料获得了0.6V//spl mu/m的极低导通场。经过多次电压上下循环后,导通场上升到1.0 V//spl mu/m以上,电流密度下降。本文提出了一种讨论纳米结构碳基薄膜场电子发射机理的理论模型,并对其发射特性进行了解释。理论模型考虑了薄膜表面的局部态、碳原子的悬垂键和吸附物。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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