Excellent 22FDX Hot-Carrier Reliability for PA Applications

Abstract

This work shows the excellent HCI (hot-carrier injection) reliability that 22FDX demonstrates for mmWave PA applications. The underlying device physics to explain this performance are also shown. Due to the fact that fully depleted SOI (FDSOI) eliminates the lateral bipolar device, the MOSFETs in 22FDX® technology have an increased BVDSs when compared to a device in a partially depleted SOI (PDSOI) technology. A 2-stack PA is presented that demonstrates excellent reliability against all HCI stress. The device aging model is built based on the device stress data specific for PA applications. RelXpert is used to simulate device aging based on the model and suggests excellent PA reliability even under the worst mismatch condition.