Self-limited RRAM with ON/OFF resistance ratio amplification

Abstract

We demonstrate sub-5nm filament based electrochemical metallization RRAM with self-limited program in a reliable and controllable manner. This RRAM removes the necessity for any external current compliance in a 1TnR (1S1R) architecture. Furthermore, we report a novel technique to amplify RRAM's intrinsic ON/OFF resistance ratio by a factor of >104, which offers significant cell-, circuit- and system-level benefits such as reduced power, reduced BER and increased read bandwidth in high density RRAM.