Fully integrated ultra wide band CMOS low noise amplifier

Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI:10.1109/ESSCIR.2004.1356711

C. Grewing, M. Friedrich, G. Puma, C. Sandner, S. Waasen, A. Wiesbauer, K. Winterberg

引用次数: 11

Abstract

A single ended low noise amplifier (LNA) in distributed amplifier technique for ultra wide band (UWB) fabricated in a standard 0.13 /spl mu/m CMOS technology is presented. Measurement results are given for a chip-on-board module to take possible influences of a product assembly into account. The amplifier provides 15 dB gain with a corner frequency up to 5 GHz, a noise figure of 4.5 dB to 5.5 dB at 50 /spl Omega/ in this frequency range and an input 1 dB-compression point of -5 dBm.

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全集成超宽带CMOS低噪声放大器

提出了一种采用标准0.13 /spl μ m CMOS工艺制作的超宽带分布式放大器单端低噪声放大器。给出了一个片上模块的测量结果，以考虑到产品组装的可能影响。该放大器提供15db增益，转角频率高达5ghz，在50 /spl ω /频率范围内噪声系数为4.5 dB至5.5 dB，输入1db压缩点为- 5dbm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 30th European Solid-State Circuits Conference

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