A comparative device and performance analysis between a Si-Ge epitaxial-base HBT and a Si double-poly I/I BJT npn structure

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274085

M. Pelella, P. Nguyen, M.J. Saccamango, S. Ratanaphanyarat, J. Comfort, S. Fischer, R. Knepper, P.P. Peressini, S. Chu

引用次数: 3

Abstract

The device characteristics and performance leverage of a SiGe epitaxial-base heterojunction bipolar transistor (HBT) are compared to those of an advanced Si double-poly ion-implanted (I/I)-base bipolar junction transistor (BJT) npn structure. In addition, a collector-base profile optimization for the SiGe device structure is described. Two-dimensional numerical process and device simulators and a lumped equivalent circuit model generator are used for the comparison along with experimental data. The simulated results show a greater than 3* increase in current gain, a 1.5* increase in the unity-gain cutoff frequency, and a 13% improvement in ECL circuit delay for the SiGe device. The experimental results confirm the device behavior predicted by the simulations.<>

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Si- ge外延基HBT与Si双聚I/I BJT npn结构的比较器件及性能分析

将SiGe外延基异质结双极晶体管(HBT)的器件特性和性能优势与先进的Si双多离子注入(I/I)基双极结晶体管(BJT) npn结构进行了比较。此外，还描述了SiGe器件结构的基于收集器的配置文件优化。利用二维数值过程与器件模拟器和集总等效电路模型发生器与实验数据进行了比较。仿真结果表明，SiGe器件的电流增益提高了3倍以上，单位增益截止频率提高了1.5倍，ECL电路延迟提高了13%。实验结果证实了模拟预测的器件行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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