PVT variations aware optimal sleep vector determination of dual VT domino OR circuits

Na Gong, Jinhui Wang, R. Sridhar
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引用次数: 2

Abstract

In this paper, determining optimal leakage vector for dual Vt domino OR circuits is explored under process, supply voltage, and temperature (PVT) variations based on 65 nm bulk and 45 nm high k/metal gate (HK+MG) technologies, while considering design parameters, environmental parameters, working characteristics of circuits, and application cases. It concludes that the high clock signal with high inputs (CHIH) vector is the optimal sleep vector for practical low leakage register files applications, and the HK+MG technology further highlights the effectiveness of the CHIH vector as compared to other vectors.
PVT变化意识到双VT多米诺或电路的最佳睡眠向量确定
本文在考虑设计参数、环境参数、电路工作特性和应用实例的基础上,探讨了基于65 nm体积和45 nm高k/金属栅极(HK+MG)技术在工艺、电源电压和温度(PVT)变化情况下双Vt多米诺或电路的最佳泄漏矢量确定问题。结果表明,高时钟信号与高输入(CHIH)矢量是实际低漏寄存器文件应用的最佳睡眠矢量,而HK+MG技术进一步突出了CHIH矢量与其他矢量相比的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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