A 12.4fJ-FoM 4-Bit Flash ADC Based on the StrongARM Architecture

Abdullah S. Almansouri, Abdullah Alturki, H. Fariborzi, K. Salama, T. Al-Attar
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引用次数: 1

Abstract

This work proposes an efficient 4-bit flash ADC based on the StrongARM comparator architecture. The proposed design eliminates the need for the resistive ladder by systematically modifying the sizing of the input differential pair of each comparator. As a consequence, the area and the power consumed within the ladder is eliminated. Furthermore, a Helpee StrongARM circuit is introduced which enables operation at an input voltage below the threshold voltage of the transistor. An enhanced 1-out-of-15 decoder converts the thermometer code from the StrongARM and the Helpee StrongARM comparators into a 1-out-of-n code. The proposed 4-bit flash ADC architecture, simulated in 90nm standard CMOS technology, consumes $292 {\mu } \mathrm {W}$ at 1.6 GHz sampling frequency, has an ENOB of 3.88 and FoM of 12.4 fJ/conv.step.
基于StrongARM架构的12.4fJ-FoM 4位闪存ADC
本文提出了一种基于StrongARM比较器架构的高效4位闪存ADC。提出的设计通过系统地修改每个比较器的输入差分对的大小,消除了对电阻阶梯的需要。因此,消除了梯子内部消耗的面积和功率。此外,还引入了一个Helpee StrongARM电路,使其能够在低于晶体管阈值电压的输入电压下工作。增强型1 / 15解码器将来自StrongARM和Helpee StrongARM比较器的温度计代码转换为1 / n代码。所提出的4位闪存ADC架构在90nm标准CMOS技术下进行仿真,在1.6 GHz采样频率下功耗为292美元,ENOB为3.88,FoM为12.4 fJ/conv.step。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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