Assessment of a unipolar pulsed ramp for the characterisation of MOS gate oxide reliability

Abstract

The unipolar pulsed ramp is compared to the commonly used staircase ramp. RVS and combined RVS/CVS measurements are performed on MOS gate oxides using both types of ramps with a wide range of ramp parameters. From the experiments it can be concluded that the unipolar pulsed ramp shows identical measurement results to the staircase ramp.