Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond

Abstract

We demonstrate a Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate (RMG) technology, which uses only thin TiN layers as workfunction (WF)-setting metals for CMOS integration. The SIGMA stack provides 100× PBTI lifetime improvement via band alignment engineering. Moreover, the SIGMA stack enables 9nm more gate length (Lg) scaling compared to the conventional stack with matched gate resistance and thus opens up pathways for aggressive Lg scaling toward the 14nm node and beyond.