A split gate vertical GaN power transistor with intrinsic reverse conduction capability and low gate charge

R. Zhu, Qi Zhou, H. Tao, Yi Yang, Kai Hu, D. Wei, Liyang Zhu, Yuanyuan Shi, Wanjun Chen, X. Luo, Bo Zhang
{"title":"A split gate vertical GaN power transistor with intrinsic reverse conduction capability and low gate charge","authors":"R. Zhu, Qi Zhou, H. Tao, Yi Yang, Kai Hu, D. Wei, Liyang Zhu, Yuanyuan Shi, Wanjun Chen, X. Luo, Bo Zhang","doi":"10.1109/ISPSD.2018.8393640","DOIUrl":null,"url":null,"abstract":"In this work, a vertical normally-off GaN device featuring split-gate with intrinsic reverse conduction (RCVFET) functionality and low gate capacitance is proposed and studied by simulation. Different from the lateral AlGaN/GaN HEMT, the RC characteristics of the proposed RCVFET are independent with the threshold voltage of the device, while a low VR, ON of 0.8 V is obtained. Owing to the split-gate design, the gate charge is respectably reduced that is beneficial for improving the switching speed of the RCVFET. The device exhibits a low Ron of 0.93 mΩ.cm2 and a BV of 1280V. The reverse recovery time is 13ns. The QGD is 80 nC that is only one fifth of that obtained in the reference device without split-gate.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

In this work, a vertical normally-off GaN device featuring split-gate with intrinsic reverse conduction (RCVFET) functionality and low gate capacitance is proposed and studied by simulation. Different from the lateral AlGaN/GaN HEMT, the RC characteristics of the proposed RCVFET are independent with the threshold voltage of the device, while a low VR, ON of 0.8 V is obtained. Owing to the split-gate design, the gate charge is respectably reduced that is beneficial for improving the switching speed of the RCVFET. The device exhibits a low Ron of 0.93 mΩ.cm2 and a BV of 1280V. The reverse recovery time is 13ns. The QGD is 80 nC that is only one fifth of that obtained in the reference device without split-gate.
一种具有本征反导能力和低栅极电荷的分栅垂直GaN功率晶体管
在这项工作中,提出了一种具有本征反导(RCVFET)功能和低栅极电容的垂直正常关断GaN器件,并进行了仿真研究。与横向AlGaN/GaN HEMT不同,本文提出的RCVFET的RC特性与器件的阈值电压无关,而获得0.8 V的低VR, ON。由于分栅设计,栅极电荷显著降低,有利于提高RCVFET的开关速度。该设备的Ron为0.93 mΩ。cm2, BV 1280V。反向恢复时间为13ns。QGD为80nc,仅为参考器件无分栅时得到的QGD的五分之一。
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