R. Zhu, Qi Zhou, H. Tao, Yi Yang, Kai Hu, D. Wei, Liyang Zhu, Yuanyuan Shi, Wanjun Chen, X. Luo, Bo Zhang
{"title":"A split gate vertical GaN power transistor with intrinsic reverse conduction capability and low gate charge","authors":"R. Zhu, Qi Zhou, H. Tao, Yi Yang, Kai Hu, D. Wei, Liyang Zhu, Yuanyuan Shi, Wanjun Chen, X. Luo, Bo Zhang","doi":"10.1109/ISPSD.2018.8393640","DOIUrl":null,"url":null,"abstract":"In this work, a vertical normally-off GaN device featuring split-gate with intrinsic reverse conduction (RCVFET) functionality and low gate capacitance is proposed and studied by simulation. Different from the lateral AlGaN/GaN HEMT, the RC characteristics of the proposed RCVFET are independent with the threshold voltage of the device, while a low VR, ON of 0.8 V is obtained. Owing to the split-gate design, the gate charge is respectably reduced that is beneficial for improving the switching speed of the RCVFET. The device exhibits a low Ron of 0.93 mΩ.cm2 and a BV of 1280V. The reverse recovery time is 13ns. The QGD is 80 nC that is only one fifth of that obtained in the reference device without split-gate.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In this work, a vertical normally-off GaN device featuring split-gate with intrinsic reverse conduction (RCVFET) functionality and low gate capacitance is proposed and studied by simulation. Different from the lateral AlGaN/GaN HEMT, the RC characteristics of the proposed RCVFET are independent with the threshold voltage of the device, while a low VR, ON of 0.8 V is obtained. Owing to the split-gate design, the gate charge is respectably reduced that is beneficial for improving the switching speed of the RCVFET. The device exhibits a low Ron of 0.93 mΩ.cm2 and a BV of 1280V. The reverse recovery time is 13ns. The QGD is 80 nC that is only one fifth of that obtained in the reference device without split-gate.