The impulse current degradation of ZnO varistor ceramics

Xuetong Zhao, Jianying Li, Huan Li, Shengtao Li
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引用次数: 4

Abstract

The effect of impulse current degradation on the property of ZnO varistor ceramics has been performed in this study. The breakdown field E1mA (electric field at 1 mA/cm2) increases, keep stable and then decreases with increase of impulse degradation, while nonlinear coefficient α drops significantly over the whole degradation process. SEM results indicate that after the degradation of ZnO varistor ceramics, more voids and inhomogeneity of grain distribution can be observed. In addition, the critical thickness of dimensional effect of ZnO varistor ceramics increases with the impulse current degradation process. The relaxation processes of these samples were also studied by means of dielectric spectra measured in a wide range of temperature and frequency. The activation energy of intrinsic and extrinsic defects which exhibit structure of grain and grain boundary, were decreased obviously when degradation happens. It is suggested that the large impulse current will lead to the breakdown of some grain boundaries and consequently change the microstructure and defect structure of ZnO varistor ceramics.
ZnO压敏电阻陶瓷的脉冲电流降解
研究了脉冲电流降解对ZnO压敏电阻陶瓷性能的影响。击穿场E1mA (1ma /cm2时的电场)随脉冲退化的增加先增大后保持稳定,而非线性系数α在整个降解过程中显著减小。SEM结果表明,ZnO压敏电阻陶瓷降解后,气孔增多,晶粒分布不均匀。此外,ZnO压敏电阻陶瓷尺寸效应的临界厚度随脉冲电流降解过程的增加而增加。通过在较宽的温度和频率范围内测量的介电谱,研究了这些样品的弛豫过程。表现为晶粒和晶界结构的内源性缺陷和外源性缺陷的活化能在降解过程中明显降低。结果表明,较大的脉冲电流会导致ZnO压敏电阻陶瓷的某些晶界被击穿,从而改变ZnO压敏电阻陶瓷的微观结构和缺陷结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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