A self-aligned InP/InGaAs/InP DHBT with hexagonal-shaped emitters

2008 International Conference on Microwave and Millimeter Wave Technology Pub Date : 2008-04-21 DOI:10.1109/ICMMT.2008.4540451

Yan Zhao, Zheng-Shu Zhang, Jianfeng Gao

引用次数: 0

Abstract

InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1x10 mum have demonstrated a peak cutoff frequency fT of 170GHz. Typical BVCEO exceeds 8V.

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具有六角形发射体的自对准InP/InGaAs/InP DHBT

采用六边形发射体自对准工艺成功制备了InP/InGaAs/InP双异质结双极晶体管(dhbt)。尺寸为1x10 mm的dhbt的峰值截止频率fT为170GHz。典型BVCEO超过8V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 International Conference on Microwave and Millimeter Wave Technology

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