Impact of scribe line (kerf) defectivity on wafer yield

F. Khatkhatay, Ludmila Popova, Chih-chieh Huang, H. Lee, Y. Zang, K. C. Ahn, C. Tsao, Tae Hoon Lee, Thirukumaran Mahalingam, Haiting Wang, Amit Gupta, Julie Lee, Towshif Ali, J. M. Kaule
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引用次数: 2

Abstract

Scribe line (also known as kerf or frame) is an area in a silicon wafer which is used to separate individual die at the end of wafer processing. This area also contains features which assist in the manufacturing process but are not present in a final product. Examples of such features include lithography alignment and overlay marks, thickness measurement pads and electric test macros. The overall design of scribe line features can be drastically different from the die layout. In the chemical mechanical polishing (CMP) process, regions of low pattern density have higher polishing rates compared to those of high pattern density, leading to overpolishing or "dishing". The scribe line, with intermittent regions of low and high pattern density, is naturally more prone to dishing, an issue which is exacerbated by thickness variation at the wafer edge. In this work, we present examples of how interaction between process variation and scribe line design can result in yield loss for the prime die.
刻线缺陷对晶圆成品率的影响
划线线(也称为切口或边框)是硅片上的一个区域,用于在硅片加工结束时分离单个模具。该领域还包含有助于制造过程但不存在于最终产品中的特性。这些特征的例子包括光刻对准和覆盖标记,厚度测量垫和电测试宏。划线特征的整体设计可能与模具布局有很大的不同。在化学机械抛光(CMP)过程中,低图案密度的区域比高图案密度的区域具有更高的抛光速率,导致过度抛光或“碟形”。具有低和高图案密度间歇区域的划线,自然更容易出现碟形,晶圆边缘的厚度变化加剧了这一问题。在这项工作中,我们提出了工艺变化和划线设计之间的相互作用如何导致主要模具的产量损失的例子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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