Leak-Proof Packaging for GaN Chip with Controlled Thermal Spreading and Transients

Yasuo Saito, T. Aizawa, K. Wasa, Yoshiro Nogami
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引用次数: 2

Abstract

Plastic mold packaging is proposed as the first solution to make leak proof joinability between the heat spreader and plastic mold by optimization of micro-textures on the spreader. No leaks were detected after gross-leak testing. Vertically-aligned graphitic substrate (VGS) provided the second solution to control thermal spreading and transients from GaN to the spreader. A Copper-laminated VGS with stacking graphene planes in Y and Z-axes significantly reduced the channel temperature and Thermal resistance (Rth) by 40 K and 0.28 K/W than those in Cu-based composite substrate (CCS) even for the same spreader thickness of 1 mm. Since thermal diffusivity for VGS is ten times faster than CCS., temperature difference during ON/OFF intervals was reduced by 18 K between Cu-laminated VGS-packaged and CCS-packaged GaN HEMTs. The time constant of Cu-laminated VGS-packaged GaN HEMT was 2.5 ms, much longer than 0.2 ms.
控制热扩散和瞬态的GaN芯片防泄漏封装
首先提出了塑料模具包装方案,通过优化散热片上的微纹理,实现散热片与塑料模具的防漏接合。总泄漏测试后未检测到泄漏。垂直排列的石墨衬底(VGS)提供了第二种解决方案来控制从GaN到衬底的热扩散和瞬态。在铺层厚度为1 mm的情况下,在Y轴和z轴上叠加石墨烯平面的铜层VGS与cu基复合衬底(CCS)相比,通道温度和热阻(Rth)分别降低了40 K和0.28 K/W。因为VGS的热扩散率比CCS快十倍。结果表明,cu层压vgs封装的GaN hemt与ccs封装的GaN hemt在开/关期间的温差减小了18 K。Cu-laminated VGS-packaged GaN HEMT的时间常数为2.5 ms,远长于0.2 ms。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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